BGU8H1是NXP公司的一款LNAs产品，BGU8H1是SiGe:C Low Noise Amplifier MMIC for LTE，本站介绍了BGU8H1的封装应用图解、特点和优点、功能等，并给出了与BGU8H1相关的NXP元器件型号供参考。
BGU8H1 - SiGe:C Low Noise Amplifier MMIC for LTE - LNAs - RF MMIC放大器与混频器 - 恩智浦, LLC
The BGU8H1 is a Low Noise Amplifier (LNA) for LTE receiver applications, available in asmall plastic 6-pin extremely thin leadless package. The BGU8H1 requires one externalmatching inductor.
The BGU8H1 adapts itself to the changing environment resulting from co-habitation ofdifferent radio systems in modern cellular handsets. It has been designed for low powerconsumption and optimal performance. At low jamming power levels it delivers 13 dB gainat a noise figure of 0.9 dB. During high power levels, it temporarily increases its biascurrent to improve sensitivity.
The BGU8H1 is optimized for 2300 MHz to 2690 MHz.
- Operating frequency from 2300 MHz to 2690 MHz
- Noise figure (NF) = 0.9 dB
- Gain 13 dB
- High input 1 dB compression point of -1 dBm
- High in band IP3i of 8 dBm
- Supply voltage 1.5 V to 3.1 V
- Self shielding package concept
- Integrated supply decoupling capacitor
- Optimized performance at a supply current of 5.0 mA
- Power-down mode current consumption < 1 μA
- Integrated temperature stabilized bias for easy design
- Require only one input matching inductor
- Output DC decoupled
- ESD protection on all pins (HBM > 2 kV)
- Integrated matching for the output
- Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch:SOT1232
- 180 GHz transit frequency - SiGe:C technology
- Moisture sensitivity level of 1
- LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-endmodules
