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BLL8H1214L-250技术文档下载：
BLL8H1214L-250产品应用图解：
BLL8H1214L-250 - LDMOS L-band radar power transistor
BLL8H1214L-250是NXP公司的一款RF功率晶体管产品，BLL8H1214L-250是LDMOS L-band radar power transistor，本站介绍了BLL8H1214L-250的封装应用图解、特点和优点、功能等，并给出了与BLL8H1214L-250相关的NXP元器件型号供参考。
BLL8H1214L-250 - LDMOS L-band radar power transistor - RF功率晶体管 - RF MMIC放大器与混频器 - 恩智浦, LLC
产品描述
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to1.4 GHz range.
产品特性和优势
- Easy power control
- Integrated dual side ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1.2 GHz to 1.4 GHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances(RoHS)
产品应用
- L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequencyrange
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