

PBHV2160Z - 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
PBHV2160Z是NXP公司的一款高压低VCEsat(BISS)晶体管产品,PBHV2160Z是600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor,本站介绍了PBHV2160Z的封装应用图解、特点和优点、功能等,并给出了与PBHV2160Z相关的NXP元器件型号供参考。
PBHV2160Z - 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor - 高压低VCEsat(BISS)晶体管 - 低VCEsat(BISS)晶体管 - 恩智浦, LLC
产品描述
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV3160Z
产品特性和优势
- Low collector-emitter saturation voltage VCEsat
- High collector current capability
- High collector current gain hFE at high IC
产品应用
- Electronic ballast for fluorecent lighting
- LED driver for LED chain module
- LCD backlighting
- HID front lighting
- Hook switch for wired telecom
- Switch Mode Power Supply (SMPS)
下面可能是您感兴趣的NXP公司高压低VCEsat(BISS)晶体管元器件


NXP公司产品现货专家,订购NXP公司产品不限最低起订量,NXP芯片大陆现货即时发货,香港库存3-5天发货,海外库存7-10天发货
寻找全球NXP代理商现货货源 - NXP公司(恩智浦)电子元件在线订购